- ホームページ
- 電源管理
- MOSFET
- GaN MOSFETs
- SGMGB05340
The SGMGB05340 is GaN-on-Silicon E-mode power transistor whose drain to source breakdown voltage and source to drain breakdown voltage are greater than 40V.
PRODUCT SUMMARY
RDSON & RSDON (TYP) VGS = 6V | RDSON & RSDON (MAX) VGS = 6V | ID & IS (MAX) TC = +25℃ |
---|---|---|
3.6mΩ | 4.8mΩ | 20A |
More
特性
- E-mode Transistor-Normally Off Power Switch
- Zero Reverse Recovery Loss
- Ultra High Switching Frequency
- RoHS Compliant and Halogen Free
アプリケーション
USB-C
Load Switch
OVP Protection Switch