SGMGQ11810

The SGMGQ11810 is a 100V, 60A power stage with integrated half-bridge GaNFETs in a compact 5mm × 6.5mm LGA package. Included in the package are two high-performance GaN FETs, drivers, and driver supply capacitors, offering the industry’s most compact and efficient GaN power solution. 

The SGMGQ11810 provides two logic inputs for controlling the high-side and low-side GaN FETs for maximum flexibility. The split driver outputs allow for independent adjustment of turn-on and turn-off strengths, optimizing both EMI and efficiency. 

The SGMGQ11810 features input interlocking with an internal adaptive shoot-through protection circuit, ensuring no simultaneous output conduction even at near zero dead time. Comprehensive fault protection is built into the SGMGQ11810, including active bootstrap (BST) voltage control to prevent overcharge and ensure stable gate drive voltage, independent UVLO and OVLO for both VCC and BST, and over-temperature protection. 

With fast propagation delay, excellent delay matching, superior dv/dt immunity, and ultra-low in-package parasitic inductance loop, the SGMGQ11810 enables designers to achieve substantial improvement in power density and efficiency.